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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1563 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) *Wide Area of Safe Operation *Complement to Type 2SB1086 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25 w w scs .i w VALUE 120 120 5.0 1.5 3 10 1.2 150 -55~150 UNIT V .cn mi e V V A A PC Total Power Dissipation @ Ta=25 TJ Tstg Junction Temperature Storage Temperature Range W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1563 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50A; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50A; IC= 0 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 2.0 V Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.5 V A A Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE Classifications N 56-120 P 82-180 w ww R scs .i VEB= 4V; IC= 0 IC= 0.1A; VCE= 5V IC= 0.1A; VCE= 5V .cn mi e 56 1.0 1.0 390 80 MHz IE= 0; VCB= 10V; ftest= 1MHz 20 pF Q 120-270 180-390 isc Websitewww.iscsemi.cn 2 |
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